STMicroelectronics has introduced its latest generation of energy-efficient power devices that reduce the environmental impact of equipment such as telecom or computing systems, solar inverters, industrial automation and automotive applications.
The new Strip FET VII Deep GATE MOSFETs deliver the best conducting efficiency among currently available 80V and 100V devices, while switching efficiency is also increased.
The critical advance in the new technology is an enhanced MOSFET gate structure, which lowers device on-state resistance while also reducing internal capacitances and gate charge for faster, more efficient switching. The devices also have high avalanche ruggedness to survive potentially damaging hard conditions, which makes them a strong choice for automotive applications.
More than 15 devices are available, including the STP270N8F7 80V device and several 100V parts in a choice of TO-220, DPAK, Power FLAT 5×6, and 2-lead or 6-lead H2PAK packages.Read More: Greener MOSFETs
The new Strip FET VII Deep GATE MOSFETs deliver the best conducting efficiency among currently available 80V and 100V devices, while switching efficiency is also increased.
The critical advance in the new technology is an enhanced MOSFET gate structure, which lowers device on-state resistance while also reducing internal capacitances and gate charge for faster, more efficient switching. The devices also have high avalanche ruggedness to survive potentially damaging hard conditions, which makes them a strong choice for automotive applications.More than 15 devices are available, including the STP270N8F7 80V device and several 100V parts in a choice of TO-220, DPAK, Power FLAT 5×6, and 2-lead or 6-lead H2PAK packages.Read More: Greener MOSFETs