Resistive random-access memory (RRAM or Re RAM) is a type of non-volatile (NV) random-access (RAM) computer memory that works by changing the resistance across a dielectric solid-state material often referred to as a memristor.
Fujitsu Semiconductor has just launched world’s largest density 4 Mbit Re RAM product for mass production: MB85AS4MT. Partnering with Panasonic Semiconductor Solutions, this chip came to life.
The MB85AS4MT is an SPI-interface Re RAM product that operates with a wide range of power supply voltage, from 1.65V to 3.6V. It features an extremely small average current in read operations of 0.2mA at a maximum operating frequency of 5MHz.
It is optimal for battery operated wearable devices and medical devices such as hearing aids, which require high density, low power consumption electronic components.
- Memory Density (configuration): 4 Mbit (512K words x 8 bits)
- Interface: Serial peripheral interface (SPI)
- Operating power supply voltage: 1.65V – 3.6V
- Low power consumption:
- Read operating current: 0.2mA (at 5MHz)
- Write operating current: 1.3mA (during write cycle time)
- Standby current: 10µA
- Sleep current: 2µA
- Guaranteed write cycles: 1.2 million cycles
- Guaranteed read cycles: Unlimited
- Write cycle time (256 byte page): 16ms (with 100% data inversion)
- Data retention: 10 years (up to 85°C)
- Package: 209 mil 8-pin SOP
Read More: The New Fujitsu Re Ram